Title :
Latch-up characteristics of a trench-gate conductivity modulated power transistor
Author :
Jun, Cai ; Sin, Johnny K O ; Ng, Wai Tung ; Lai, Peter P T
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong
Abstract :
In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n+ and p+ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p+ cathode
Keywords :
current density; power bipolar transistors; semiconductor device models; 2D simulation; LTGBT; conductivity modulated power transistor; latch-up characteristics; latchup current density; lateral trench-gate bipolar transistor; n+ cathode regions; p+ cathode regions; trench-gate power transistor; Anodes; Bipolar transistors; Cathodes; Conductivity; Current density; Power engineering and energy; Power integrated circuits; Power transistors; Silicon compounds; Threshold voltage;
Conference_Titel :
Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
Print_ISBN :
0-7803-2624-5
DOI :
10.1109/TENCON.1995.496430
