Latch-up characteristics of a trench-gate conductivity modulated power transistor

Author

Jun, Cai ; Sin, Johnny K O ; Ng, Wai Tung ; Lai, Peter P T

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1995

fDate

6-10 Nov 1995

Firstpage

424

Lastpage

427

Abstract

In this paper, a new conductivity modulated power transistor, called the Lateral Trench-Gate Bipolar Transistor (LTGBT), is presented. The current at which the latch-up occurs in the structure is estimated in comparison with that of the LIGBT. The latch-up current density for the LTGBT exhibits more than 7.7 times improvement over the LIGBT. The dependence of the latch-up current density on the design of the n⁺ and p⁺ cathode regions of the structure is also examined. The maximum controllable latch-up current density is found to increase with decreasing the space between the trench gate and the p⁺ cathode

Keywords

current density; power bipolar transistors; semiconductor device models; 2D simulation; LTGBT; conductivity modulated power transistor; latch-up characteristics; latchup current density; lateral trench-gate bipolar transistor; n⁺ cathode regions; p⁺ cathode regions; trench-gate power transistor; Anodes; Bipolar transistors; Cathodes; Conductivity; Current density; Power engineering and energy; Power integrated circuits; Power transistors; Silicon compounds; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on

Print_ISBN

0-7803-2624-5

Type

conf

DOI

10.1109/TENCON.1995.496430

Filename

496430