• DocumentCode
    3537087
  • Title

    An EPROM cell with a magnesium electronic injector

  • Author

    Kong, Sik On ; Kwok, Chee Yee ; Wong, Sai Peng

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Auckland Univ., New Zealand
  • fYear
    1995
  • fDate
    6-10 Nov 1995
  • Firstpage
    456
  • Lastpage
    459
  • Abstract
    By using Mg as the tunnelling electrode for an EPROM cell, it is shown in a control experiment that the tunnelling current is much enhanced while the tunnelling field is much reduced after a sintering procedure in which Mg reacts with the SiO2 dielectric. Potentially, this may lead to faster programming, lower programming voltages and better programming endurance. An experimental EPROM cell has been made and has demonstrated programmability
  • Keywords
    EPROM; MOS memory circuits; magnesium; sintering; tunnelling; EPROM cell; Mg-SiO2; SiO2 dielectric; magnesium electronic injector; programmability; sintering; tunnelling electrode; Cathodes; Crystalline materials; Current density; EPROM; Electrodes; Electrons; Magnesium; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and VLSI, 1995. TENCON '95., IEEE Region 10 International Conference on
  • Print_ISBN
    0-7803-2624-5
  • Type

    conf

  • DOI
    10.1109/TENCON.1995.496438
  • Filename
    496438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537087