DocumentCode :
3537212
Title :
Fabrication of tunnel barrier by scanning probe lithography
Author :
Pavlova, A.Y. ; Khivintsev, Yurii V. ; Filimonov, Yuri A. ; Zaharov, A.A. ; Tiercelin, Nicolas ; Pernod, Philippe
Author_Institution :
Saratov State Tech. Univ., Saratov, Russia
fYear :
2012
fDate :
19-20 Sept. 2012
Firstpage :
377
Lastpage :
380
Abstract :
Atomic force microscope was used to fabricate nano oxide line crossing nickel microstructure. After oxidation current-voltage characteristics of the structure showed tunnel barrier behavior.
Keywords :
atomic force microscopy; crystal microstructure; electrical conductivity; microfabrication; nanofabrication; nanolithography; nanostructured materials; oxidation; tunnelling; atomic force microscopy; nanooxide line crossing nickel microstructure; oxidation current-voltage characteristics; scanning probe lithography; tunnel barrier behavior; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
Type :
conf
DOI :
10.1109/APEDE.2012.6478085
Filename :
6478085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3537212
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