DocumentCode
3537212
Title
Fabrication of tunnel barrier by scanning probe lithography
Author
Pavlova, A.Y. ; Khivintsev, Yurii V. ; Filimonov, Yuri A. ; Zaharov, A.A. ; Tiercelin, Nicolas ; Pernod, Philippe
Author_Institution
Saratov State Tech. Univ., Saratov, Russia
fYear
2012
fDate
19-20 Sept. 2012
Firstpage
377
Lastpage
380
Abstract
Atomic force microscope was used to fabricate nano oxide line crossing nickel microstructure. After oxidation current-voltage characteristics of the structure showed tunnel barrier behavior.
Keywords
atomic force microscopy; crystal microstructure; electrical conductivity; microfabrication; nanofabrication; nanolithography; nanostructured materials; oxidation; tunnelling; atomic force microscopy; nanooxide line crossing nickel microstructure; oxidation current-voltage characteristics; scanning probe lithography; tunnel barrier behavior; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4673-2096-2
Type
conf
DOI
10.1109/APEDE.2012.6478085
Filename
6478085
Link To Document