DocumentCode
3537334
Title
Electrophysical properties of nanostructures Al-SiMP-pSi-Al, passivated by iron
Author
Bilenko, D.I. ; Galushka, V.V. ; Zharkova, E.A. ; Mysenko, I.B. ; Terin, D.V. ; Hasina, E.I.
Author_Institution
Saratov State Univ., Saratov, Russia
fYear
2012
fDate
19-20 Sept. 2012
Firstpage
430
Lastpage
431
Abstract
The current-voltage and the current-capacitance characteristics of structures on the basis of mesoporous silicon received by nonelectrolitic method of etching at passivation by iron (SiMP:Fe) are investigated. It is shown, that in heterostructures Al-SiMP:Fe-pSi-Al conductivity and barriers depend on Fe concentration no monotonic.
Keywords
aluminium; capacitance; electrical conductivity; elemental semiconductors; etching; iron; mesoporous materials; metal-semiconductor-metal structures; nanostructured materials; passivation; porous semiconductors; silicon; Al-Si:Fe-Si-Al; current-capacitance characteristics; current-voltage characteristics; electrical conductivity; electrophysical properties; etching; heterostructures; mesoporous silicon; nanostructures; nonelectrolitic method; passivation; Iron;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4673-2096-2
Type
conf
DOI
10.1109/APEDE.2012.6478095
Filename
6478095
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