• DocumentCode
    3537345
  • Title

    The influence of NiSO4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method

  • Author

    Bilenko, D.I. ; Galushka, V.V. ; Mysenko, I.B. ; Terin, D.V.

  • Author_Institution
    Saratov State Univ., Saratov, Russia
  • fYear
    2012
  • fDate
    19-20 Sept. 2012
  • Firstpage
    432
  • Lastpage
    433
  • Abstract
    The influence of NiSO4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method are investigated.
  • Keywords
    electrochemical analysis; elemental semiconductors; mesoporous materials; nickel compounds; porous semiconductors; semiconductor thin films; silicon; NiSO4 saturation; Si; electrochemical method; electrophysical mesoporous silicon layers; Nickel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
  • Conference_Location
    Saratov
  • Print_ISBN
    978-1-4673-2096-2
  • Type

    conf

  • DOI
    10.1109/APEDE.2012.6478096
  • Filename
    6478096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3537345