DocumentCode :
3537345
Title :
The influence of NiSO4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method
Author :
Bilenko, D.I. ; Galushka, V.V. ; Mysenko, I.B. ; Terin, D.V.
Author_Institution :
Saratov State Univ., Saratov, Russia
fYear :
2012
fDate :
19-20 Sept. 2012
Firstpage :
432
Lastpage :
433
Abstract :
The influence of NiSO4 saturation on the electrophysical mesoporous silicon layers obtained by electrochemical method are investigated.
Keywords :
electrochemical analysis; elemental semiconductors; mesoporous materials; nickel compounds; porous semiconductors; semiconductor thin films; silicon; NiSO4 saturation; Si; electrochemical method; electrophysical mesoporous silicon layers; Nickel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
Type :
conf
DOI :
10.1109/APEDE.2012.6478096
Filename :
6478096
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3537345
بازگشت