DocumentCode :
3537363
Title :
Memristor structures based on tunnel-thin organic dielectric and porous silicon layers
Author :
Bilenko, D.I. ; Galushka, V.V. ; Mysenko, I.B. ; Terin, D.V.
Author_Institution :
Saratov State Univ., Saratov, Russia
fYear :
2012
fDate :
19-20 Sept. 2012
Firstpage :
436
Lastpage :
437
Abstract :
Memristor structures based on tunnel-thin organic dielectric and porous silicon layers are investigated.
Keywords :
dielectric properties; elemental semiconductors; memristors; porous semiconductors; silicon; tunnels; Si; memristor structures; porous silicon layers; tunnel-thin organic dielectric layer; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Actual Problems of Electron Devices Engineering (APEDE), 2012 International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4673-2096-2
Type :
conf
DOI :
10.1109/APEDE.2012.6478098
Filename :
6478098
Link To Document :
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