DocumentCode :
3537474
Title :
The characteristics of magnetic tunnel junctions using the Co2MnSi Heusler alloy depending on a compositional variation
Author :
Keewon Kim ; Kim, T.W. ; Kwon, Soon-Ju
Author_Institution :
Dept. of Mater. Sci. & Eng., POSTECH, Pohang, South Korea
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1451
Lastpage :
1452
Abstract :
The magnetic tunnel junctions (MTJ) using the Heusler alloy of Co2MnSi with compositional variation was fabricated through sputtering. The Heusler alloy films were investigated by XRD, VSM, and EDS techniques. The tunneling magnetoresistance (TMR) of MTJ were also investigated.
Keywords :
X-ray chemical analysis; X-ray diffraction; cobalt alloys; ferromagnetic materials; magnetic thin films; manganese alloys; silicon alloys; sputter deposition; tunnelling magnetoresistance; Co2MnSi; EDS; Heusler alloy films; TMR; VSM; XRD; compositional variation; magnetic tunnel junctions; sputtering; tunneling magnetoresistance; Cobalt alloys; Magnetic films; Magnetic materials; Magnetic properties; Magnetic tunneling; Magnetoelectronics; Rough surfaces; Sputtering; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464155
Filename :
1464155
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3537474
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