Electrical magnetization reversal in ferromagnetic semiconductors

Author

Ohno, H. ; Yamanouchi, Masato ; Chiba, D. ; Matsukura, F.

Author_Institution

Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

1567

Lastpage

1568

Abstract

The electrical current driven domain wall motion in a lithographically defined area of ferromagnetic semiconductor structures consisting of Ga_0.95Mn_0.05As/In_0.15Ga_0.85As/GaAs/GaAs(001) substrate was demonstrated in this study using magneto-optical Kerr effect (MOKE) microscope. The results of current induced magnetization reversal in magnetic tunnel junction (MTJ) nanopillars made of ferromagnetic III-V semiconductors were also investigated.

Keywords

III-V semiconductors; Kerr magneto-optical effect; ferromagnetic materials; gallium arsenide; gallium compounds; magnetic domain walls; magnetic semiconductors; magnetic tunnelling; magnetisation reversal; nanostructured materials; Ga_0.95Mn_0.05As-In_0.15Ga_0.85As-GaAs; GaAs; MOKE; electrical current driven domain wall motion; electrical magnetization reversal; ferromagnetic III-V semiconductors; magnetic tunnel junction nanopillars; magneto-optical Kerr effect; Coercive force; Gallium arsenide; Magnetic domain walls; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic tunneling; Magnetization reversal; Magnetoelectronics; Pulse measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464217

Filename

1464217