• DocumentCode
    3538157
  • Title

    Injection of charge carriers and space charge build-up in fluoropolymer dielectrics

  • Author

    Wu, Z. Leo ; Raju, G. R Govinda

  • Author_Institution
    Dept. of Electr. Eng., Windsor Univ., Ont., Canada
  • fYear
    1995
  • fDate
    17-20 Sep 1995
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    This study concerns the injection of charge carriers and space charge build-up in fluoropolymer films by the thermally stimulated discharge (TSD) current method. Poling fields ranging from 2.5 to 20 MV m-1 are employed with the heating rates of 0.5-2 K min-1 over the temperature range of 0-200°C for TSD experiments. Silver and aluminum electrodes are employed to study the role of the cathode in the injection mechanism. The TSD currents are observed to depend on the cathode material. The magnitude of current peak and the total charge released to the external circuit with both electrode materials show a saturating trend with the poling field. This observation is consistent with the suggested mechanism of charge injection from electrodes and the space charge build up in the material. Relaxation times in the range of 4-6000 s are observed over the temperature range. Mechanisms of space charge build-up are also discussed
  • Keywords
    dielectric thin films; organic insulating materials; polymer blends; polymer films; space charge; thermally stimulated currents; 0 to 200 C; Ag; Ag electrodes; Al; Al electrodes; TSD current method; TSD currents; cathode material; charge carrier injection; fluoropolymer dielectrics; fluoropolymer films; injection mechanism; poling fields; relaxation times; space charge build-up; thermally stimulated discharge current method; Aluminum; Cathodes; Charge carriers; Circuits; Dielectrics; Electrodes; Heating; Silver; Space charge; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1995. International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    4-88686-047-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1995.496556
  • Filename
    496556