• DocumentCode
    3538377
  • Title

    Evaluation of TCNQ LB films on aluminum thin films by ATR measurement

  • Author

    Aoki, Yusuke ; Honda, Syosaku ; Wakamatsu, Takashi ; Kato, Keizo ; Kaneko, Futao

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Niigata Univ., Japan
  • fYear
    1995
  • fDate
    17-20 Sep 1995
  • Firstpage
    331
  • Lastpage
    334
  • Abstract
    The attenuated total reflection (ATR) properties were measured for C15TCNQ Langmuir-Blodgett (LB) ultrathin films on Al thin films deposited using two types of processes. The dielectric constants were theoretically calculated from the ATR curves. It was estimated that Z-type LB films were well deposited in the first process. On the contrary, in the second process, it was estimated that the LB films were not perfectly deposited as Y-type, but partially as Z-type
  • Keywords
    Langmuir-Blodgett films; aluminium; organic compounds; permittivity; reflectivity; Al; Langmuir-Blodgett ultrathin films; TCNQ; Y-type structure; Z-type structure; aluminum thin films; attenuated total reflection; dielectric constants; Aluminum; Assembly; Electric variables measurement; Laser beams; Nonhomogeneous media; Optical films; Polarization; Solids; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulating Materials, 1995. International Symposium on
  • Conference_Location
    Tokyo
  • Print_ISBN
    4-88686-047-8
  • Type

    conf

  • DOI
    10.1109/ISEIM.1995.496576
  • Filename
    496576
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3538377