DocumentCode
3538398
Title
Temperature and photoirradiation dependence of electrostatic phenomena at metal/polyimide LB film interface
Author
Itoh, Eiji ; Niwa, Yuji ; Iwamoto, Mitsumasa
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fYear
1995
fDate
17-20 Sep 1995
Firstpage
339
Lastpage
342
Abstract
Surface potentials of heat-treated PI LB films deposited on Au, Cr, Al and ITO electrodes were measured in a dark vacuum vessel at various temperatures before and after photoirradiation. The surface potential saturated when the number of deposited layers was several tens. The saturated surface potential was a linear function of the work function of electrodes at temperatures between -100°C and 150°C before photoirradiation, and at room temperature after photoirradiation. It was suggested that excess charges were transferred from electrodes into PI LB films until thermodynamic equilibrium was established at the interface. We also measured the surface potential of four kinds of PI LB films. The potential of polyimide with electron acceptors changed negatively, and the potential of polyimide with electron donors changed positively as the temperature increased. In contrast, the potential of polyimide with electron acceptors changed positively, and the potential of polyimide with electron donors changed negatively with photoirradiation
Keywords
Langmuir-Blodgett films; metal-insulator boundaries; polymer films; surface potential; -100 to 150 C; Al; Au; Cr; ITO; InSnO; charge transfer; electron acceptors; electron donors; electrostatic phenomena; heat-treated PI; metal/polyimide LB film interface; photoirradiation dependence; surface potential; temperature dependence; thermodynamic equilibrium; work function; Chemicals; Chromium; Electrodes; Electrons; Electrostatic measurements; Gold; Metal-insulator structures; Polyimides; Temperature dependence; Thermodynamics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulating Materials, 1995. International Symposium on
Conference_Location
Tokyo
Print_ISBN
4-88686-047-8
Type
conf
DOI
10.1109/ISEIM.1995.496578
Filename
496578
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