Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays

Summary form only given. The spin-on dielectric encapsulation layers were used to generate the Ga vacancies at the interface of GaAs and the spin-on dielectric encapsulation layer. The significant shift of the emission photoluminescence peak wavelength was observed in AlGaAs-GaAs and InGaAs-GaAs QWs, as a result of the Ga vacancy-enhanced disordering. Attention was focused on how to control the degrees of QW intermixing at selective areas.