Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays

Author

Li, Guolin ; Chua, S.J. ; Xu, S.J.

Author_Institution

Inst. of Mater. Res. & Eng., Singapore

fYear

1998

fDate

3-8 May 1998

Firstpage

234

Abstract

Summary form only given. The spin-on dielectric encapsulation layers were used to generate the Ga vacancies at the interface of GaAs and the spin-on dielectric encapsulation layer. The significant shift of the emission photoluminescence peak wavelength was observed in AlGaAs-GaAs and InGaAs-GaAs QWs, as a result of the Ga vacancy-enhanced disordering. Attention was focused on how to control the degrees of QW intermixing at selective areas.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; AlGaAs-GaAs; Ga; Ga vacancies; Ga vacancy-enhanced disordering; GaAs; InGaAs-GaAs; QW impurity-free vacancy disordering; QW intermixing; emission photoluminescence peak wavelength; multiple wavelength laser array fabrication; spin-on dielectric encapsulation layer; spin-on dielectric encapsulation layers; Dielectrics; Frequency; Gallium arsenide; Laser tuning; Optical arrays; Optical device fabrication; Quantum well lasers; Semiconductor laser arrays; Stability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676102

Filename

676102