Effect of band structure modification on the internal losses of 1.3-/spl mu/m InGaAsP lasers

Author

Patel, D. ; Pikal, J.M. ; Menoni, C.S.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

237

Lastpage

238

Abstract

Summary form only given. We report the results of amplified spontaneous emission (ASE) measurements in 1.3-/spl mu/m buried heterostructure InGaAsP semiconductor lasers as a function of pressure from which the variation of the optical losses with the associated band structure changes was determined. These results showed that the optical losses decreased by 20% when the bandgap increased by 12%.

Keywords

III-V semiconductors; band structure; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical losses; semiconductor lasers; superradiance; 1.3 mum; ASE measurements; InGaAsP; InGaAsP lasers; amplified spontaneous emission; band structure changes; band structure modification; bandgap; buried heterostructure InGaAsP semiconductor lasers; internal losses; optical losses; Laser modes; Laser transitions; Mirrors; Optical losses; Optical materials; Photonic band gap; Position measurement; Predictive models; Tunable circuits and devices; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676107

Filename

676107