Title :
A tunneling FET exploiting in various structures and different models: A review
Author :
Usha, C. ; Vimala, P.
Author_Institution :
Dept. of ECE, Dayananda Sagar Coll. of Eng., Bangalore, India
Abstract :
A great obstacle for ultra low MOSFETs functioning at very low voltages is there physical limit of the inversion subthreshold swing of 60mv/dec at 300K. Quantum mechanical tunneling of carriers from the source into the channel in Tunnel FETs (TFETs) overcomes in principle this hurdle. The rapid forthcoming of research regarding the TFET leads to a wide range of studied device geometries, different heterostructure combinations and applied technological methods. In this review paper, we discuss about the working principle of TFETs and we focus on various structures and different analytical models available for TFETs.
Keywords :
MOSFET; semiconductor quantum wells; tunnelling; carrier tunneling; inversion subthreshold swing; quantum mechanical tunneling; temperature 300 K; tunneling FET; tunnelng FET; ultralow MOSFET; Analytical models; Electric potential; Logic gates; MOSFET; Mathematical model; Tunneling; Analytical Models; Band to Band Tunneling (BTBT); Short Channel Effects (SCEs); Tunnel FETs;
Conference_Titel :
Innovations in Information, Embedded and Communication Systems (ICIIECS), 2015 International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-6817-6
DOI :
10.1109/ICIIECS.2015.7192878
