Full-bridged MOSFET DC-to-RF inverter for high frequency ultrasonic transducer at 3 MHz

Author

Suzuki, Taiju ; Ikeda, Hiroaki ; Mizutani, Yoko ; Nakabori, T. ; Ichioka, Yoshiyuki ; Yoshida, Hirofbmi ; Honda, Keisuke ; Miyamoto, Toshiaki ; Sano, Shuichi

Author_Institution

Shizuoka Univ., Hamamatsu, Japan

Volume

1

fYear

34881

fDate

10-14 Jul1995

Firstpage

232

Abstract

Described is a full-bridged MOSFET DC-to-RF inverter operating at a frequency of 3 MHz for driving a high frequency ultrasonic transducer for cleaning material surfaces. The full-bridged MOSFET DC-to-RF inverter generates an RF power of 60 W with a power conversion efficiency of 79 to 87% at 3 MHz when an ultrasonic transducer with a very low impedance in the order of 1 to 5 ohms is connected to the inverter. The ultrasonic transducer was satisfactorily operated when the ultrasonic transducer was driven from the full-bridged MOSFET DC-to-RF inverter

Keywords

DC-AC power convertors; bridge circuits; invertors; power MOSFET; ultrasonic cleaning; ultrasonic transducers; 3 MHz; 60 W; 79 to 87 percent; full-bridged MOSFET DC-to-RF inverter; high frequency ultrasonic transducer; inverters; load impedance; material surfaces cleaning; power conversion efficiency; very low impedance; Assembly; Circuits; Cleaning; Inverters; Power generation; Radio frequency; Resonant frequency; Semiconductor materials; Surface impedance; Ultrasonic transducers;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 1995. ISIE '95., Proceedings of the IEEE International Symposium on

Conference_Location

Athens

Print_ISBN

0-7803-7369-3

Type

conf

DOI

10.1109/ISIE.1995.496632

Filename

496632