DocumentCode :
35390
Title :
Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes
Author :
Jie Guo ; Jingquan Liu ; Bin Yang ; Guanghui Zhan ; Xiaoyang Kang ; Hongchang Tian ; Longjun Tang ; Xiang Chen ; Chunsheng Yang
Author_Institution :
Dept. of Micro/Nano-Electron., Shanghai Jiao Tong Univ., Shanghai, China
Volume :
36
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
576
Lastpage :
578
Abstract :
In this letter, we report a novel transient/ biodegradable transistor. The Al:ZnO (AZO) source, drain, and gate electrodes are directly self-assembled on the free-standing sodium alginate (SA) membrane by magnetron sputtering, and the SA membrane is used simultaneously as the substrates and dielectrics for the transistor. Due to the strong lateral electrostatic coupling effects of SA membrane, the transistor can operate at a low voltage of 1 V. Dissolution tests of the transistor in deionized water suggest its completely physical transience within 1 h.
Keywords :
aluminium; biodegradable materials; biomembranes; low-power electronics; power transistors; sputter etching; zinc compounds; Al:ZnO; biodegradable transistors; deionized water; dissolution test; free-standing SA membrane; gate electrodes; lateral electrostatic coupling effect; low-voltage transient transistors; magnetron sputtering; sodium alginate membrane; voltage 1 V; Biomembranes; Electrodes; Logic gates; Low voltage; Substrates; Transient analysis; Transistors; Low voltage transistors; free-standing sodium alginate membranes; transient/biodegradable transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2424982
Filename :
7090946
Link To Document :
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