Low phase noise oscillator topologies: Theory and application to MMIC VCOs

Author

Cignani, Rafael ; Florian, Corrado ; Filicori, Fabio ; Vannini, Giorgio

Author_Institution

Dept. of Eng., Electron. & Syst., Univ. of Bologna, Bologna, Italy

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

343

Lastpage

346

Abstract

In the paper the advantages of the push-push oscillator topology in terms of phase noise performance are discussed and experimentally verified by means of measurements on X-band and C-band GaInP-GaAs MMIC VCOs. In particular an analytical approach, based on the frequency sensitivity pushing factor parameter, is used to demonstrate the phase noise improvement of at least 9 dB inherently offered by push-push topology, with respect to a fundamental frequency oscillator. This theoretical analysis is for the first time experimentally validated trough the design and characterization of three different MMIC VCOs, specifically developed for this purpose.

Keywords

III-V semiconductors; MMIC oscillators; gallium arsenide; gallium compounds; indium compounds; voltage-controlled oscillators; C-band; GaInP-GaAs; MMIC VCO; X-band; low phase noise oscillator topologies; push-push oscillator topology; voltage-controlled oscillators; Frequency measurement; Microwave oscillators; Phase noise; Resonant frequency; Topology; Phase noise; phase noise analysis; push-push; pushing factor;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2011 IEEE International

Conference_Location

Seremban, Negeri Sembilan

Print_ISBN

978-1-4577-1628-7

Type

conf

DOI

10.1109/RFM.2011.6168763

Filename

6168763