Low actuation voltage RF MEMS switch for WiMAX applications

Author

Darani, Babak Yousefi ; Sani, Ebrahim Abbaspour ; Shayanfar, Reza ; Shams, Adel ; Mirmozafari, Mir Hamed

Author_Institution

Dept. of Electr. Eng., Urmia Univ., Urmia, Iran

fYear

2011

fDate

12-14 Dec. 2011

Firstpage

351

Lastpage

355

Abstract

This paper presents design, analysis, proposed fabrication process and simulation of a novel direct-contact (dc) RF-MEMS switch specified for WiMAX applications. The proposed MEMS switch will be used to switch the RF signal in the frequency range between 2GHz and 6GHz across a CPW transmission line. The switch has two large electrode plates to achieve low actuation voltage. The actuation voltage of the switch is 1.3V that make it compatible with CMOS circuits. The proposed structure provides excellent RF characteristics (Isolation -35dB at 10GHz and Insertion Loss -0.16dB at 10GHz). Considering the limitations of Urmia Micromachine Research Center, a verified fabrication process has been proposed.

Keywords

CMOS integrated circuits; WiMax; coplanar transmission lines; coplanar waveguides; microswitches; CMOS circuits; CPW transmission line; RF signal; Urmia Micromachine Research Center; WiMAX applications; fabrication process; frequency 2 GHz to 6 GHz; low actuation voltage RF MEMS switch; microelectro-mechanical systems; Contacts; Microswitches; Radio frequency; Springs; Stress; Switching circuits; MEMS; RF-MEMS switch; WiMAX; low actuation voltage; ohmic contact MEMS switch;

fLanguage

English

Publisher

ieee

Conference_Titel

RF and Microwave Conference (RFM), 2011 IEEE International

Conference_Location

Seremban, Negeri Sembilan

Print_ISBN

978-1-4577-1628-7

Type

conf

DOI

10.1109/RFM.2011.6168765

Filename

6168765