Title :
A 3–10 GHz low power ultra-wideband CMOS LNA
Author :
Pang-Hsing Chen ; Jeng-Rern Yang
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ., Jhongli, Taiwan
Abstract :
This study presents a 3-10 GHz ultra-wideband low noise amplifier (UWB LNA) with an interstage technique, featuring low power consumption, high gain (S21), and a low noise figure (NF). The low power consumption UWB LNA is designed using standard 0.18μm CMOS technology. Using the interstage technique (current reused topology with a peaking inductor) achieves low power consumption. The LNA achieves S21 of 13.2±1.8 dB and the NF is lower than 4.4 dB with power dissipation (PD) of only 8.24 mW.
Keywords :
CMOS analogue integrated circuits; low noise amplifiers; low-power electronics; microwave amplifiers; microwave integrated circuits; ultra wideband technology; wideband amplifiers; frequency 3 GHz to 10 GHz; interstage technique; low power UWB CMOS LNA; low power ultra-wideband CMOS low noise amplifier; noise figure; power 8.24 mW; power consumption; power dissipation; size 0.18 mum; Band pass filters; CMOS integrated circuits; Gain; Impedance matching; Power demand; Ultra wideband technology; Wideband; Low noise amplifier (LNA); ultra-wideband (UWB);
Conference_Titel :
RF and Microwave Conference (RFM), 2011 IEEE International
Conference_Location :
Seremban, Negeri Sembilan
Print_ISBN :
978-1-4577-1628-7
DOI :
10.1109/RFM.2011.6168766
