DocumentCode :
3539501
Title :
Magnetic properties of transition metal atoms doped in silicon nanotubes with hexagonal prism structure
Author :
Jang, Y.-R. ; Jo, Chulsu ; Lee, J.I.
Author_Institution :
Dept. of Phys., Incheon Univ., South Korea
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1855
Lastpage :
1856
Abstract :
Magnetic properties of doped magnetic transition metals in the infinite Si nanotubes with hexagonal prism structure (Si12Mn, M=Fe, Co Ni, n= 1, 2) for two different number of dopants were investigated using the localized basis calculational method. Equilibrium stacking distance was determined for undoped sample by calculating the total energy as a function of distance. Number of electrons for each spin, sum of electrons, amount of charge transfer and magnetic moments were also obtained and summarized for the doped samples.
Keywords :
cobalt; elemental semiconductors; ferromagnetic materials; iron; magnetic moments; nanotubes; nickel; silicon; Si12Co; Si12Co2; Si12Fe; Si12Fe2; Si12Ni; Si12Ni2; charge transfer; dopants; electron number; equilibrium stacking distance; hexagonal prism structure; localized basis calculational method; magnetic moments; magnetic properties; nanotubes; total energy; transition metal atoms; Charge transfer; Electrons; Geometry; Magnetic devices; Magnetic moments; Magnetic properties; Physics; Semiconductor device doping; Semiconductor nanotubes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464361
Filename :
1464361
Link To Document :
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