DocumentCode
3539917
Title
Quasi-nonvolatile SSD: Trading flash memory nonvolatility to improve storage system performance for enterprise applications
Author
Pan, Yangyang ; Dong, Guiqiang ; Wu, Qi ; Zhang, Tong
Author_Institution
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst. (RPI), Troy, NY, USA
fYear
2012
fDate
25-29 Feb. 2012
Firstpage
1
Lastpage
10
Abstract
This paper advocates a quasi-nonvolatile solid-state drive (SSD) design strategy for enterprise applications. The basic idea is to trade data retention time of NAND flash memory for other system performance metrics including program/erase (P/E) cycling endurance and memory programming speed, and meanwhile use explicit internal data refresh to accommodate very short data retention time (e.g., few weeks or even days). We also propose SSD scheduling schemes to minimize the impact of internal data refresh on normal I/O requests. Based upon detailed memory cell device modeling and SSD system modeling, we carried out simulations that clearly show the potential of using this simple quasi-nonvolatile SSD design strategy to improve system cycling endurance and speed performance. We also performed detailed energy consumption estimation, which shows the energy consumption overhead induced by data refresh is negligible.
Keywords
NAND circuits; flash memories; random-access storage; scheduling; NAND flash memory; SSD scheduling schemes; energy consumption; flash memory nonvolatility; program/erase cycling endurance; quasi-nonvolatile SSD; quasi-nonvolatile solid-state drive design strategy; Ash; Computer architecture; Electron traps; Noise; Programming; Registers; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Computer Architecture (HPCA), 2012 IEEE 18th International Symposium on
Conference_Location
New Orleans, LA
ISSN
1530-0897
Print_ISBN
978-1-4673-0827-4
Electronic_ISBN
1530-0897
Type
conf
DOI
10.1109/HPCA.2012.6168954
Filename
6168954
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