Coreless PCB-based transformers for power MOSFET/IGBT gate drive circuits

Author

Hui, S.Y.R. ; Chung, H. ; Tang, S.C.

Author_Institution

Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon, Hong Kong

Volume

2

fYear

1997

fDate

22-27 Jun 1997

Firstpage

1171

Abstract

Gate drive circuits for modern power electronic switches such as MOSFET and IGBT often require electrical isolation. This paper describes initial results of some coreless PCB-based transformers that can be used for MOSFET and IGBT devices at high frequency (500 kHz to 2 MHz) operation. Such transformers substantially reduce the labour cost in winding core-based transformers and simplifies the automation process of gate drive circuits

Keywords

driver circuits; field effect transistor switches; high-frequency transformers; insulated gate bipolar transistors; invertors; power MOSFET; power convertors; power field effect transistors; power semiconductor switches; printed circuits; 500 kHz to 2 MHz; automation process; coreless PCB-based transformers; electrical isolation; high frequency operation; inverters; power IGBT gate drive circuits; power converters; power electronic switches; Automation; Costs; Frequency; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power electronics; Switches; Switching circuits; Transformer cores;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE

Conference_Location

St. Louis, MO

ISSN

0275-9306

Print_ISBN

0-7803-3840-5

Type

conf

DOI

10.1109/PESC.1997.616896

Filename

616896