Improved selectivity of SAF free layer in high density MRAM array

Author

Hwang, Injun ; Jeong, Woncheol ; Park, Jaehyon ; Park, Wanjun ; Jang, Youngman ; Cho, Youngjin ; Hwang, Soonwon ; Kim, Taewan

Author_Institution

Samsung Adv. Inst. of Technol., Kiheung, South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

1973

Lastpage

1974

Abstract

In this paper, switching properties of the patterned sub-micron MTJ cells incorporating NiFe single and SAF as the free layer of MTJ were investigated. MTJs are composed of PtMn 15/CoFe 1.5/Ru 0.8/CoFe 1.5/Al-O/NiFe t₁(/Ru 0.8/NiFe t₂) (nm) with the different thickness (t₁ and t₂) of NiFe and fabricated with the standard photo-lithography process to the size of 0.3 × 1.0 μm². Remanence measurements were performed to ensure vortex states. The magnetoresistance of the MTJs were also studied.

Keywords

aluminium compounds; antiferromagnetic materials; cobalt alloys; iron alloys; magnetic storage; magnetic switching; manganese alloys; nickel alloys; photolithography; platinum alloys; random-access storage; remanence; ruthenium; tunnelling magnetoresistance; MTJ; PtMn-CoFe-Ru-CoFe-Al-O-NiFe; SAF free layer; high density MRAM array; magnetoresistance; photolithography; remanence measurements; switching properties; vortex states; Magnetoresistance; Performance evaluation; Remanence;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464425

Filename

1464425