Spin filter type magnetic tunnel junction using EuO ferromagnetic barrier

Author

Matsumoto, T. ; Kawaguchi, K. ; Koshizaki, N. ; Kashiwaya, S. ; Tani, K. ; Yamaguchi, K. ; Yamada, K.

Author_Institution

Dept. of Material Sci., Saitama Univ., Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

2001

Lastpage

2002

Abstract

The purpose of this study is to prepare high quality spin filter type MTJ (SFMTJ) and investigate the possibilities of TMR and spintronics devices. Europium monoxide (EuO), a ferromagnetic semiconductor, is considered as a good barrier material for a trial study of SFMTJ. The magnetic properties of the EuO nanolayers is, first, investigated to employ them as ferromagnetic barriers. Observed magnetization saturation and coercivity confirm the ferromagnetic properties of the material and indicate compound formation at the interfaces.

Keywords

coercive force; europium compounds; ferromagnetic materials; magnetic semiconductors; tunnelling magnetoresistance; EuO; MTJ; TMR; coercivity; europium monoxide; ferromagnetic barrier; ferromagnetic semiconductor; magnetization saturation; nanolayers; spin filter type magnetic tunnel junction; spintronics devices; Electrodes; Electrons; Filters; Magnetic separation; Magnetic tunneling; Magnetoelectronics; Niobium; Optical polarization; Spectroscopy; Tunneling magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464439

Filename

1464439