DocumentCode :
3540115
Title :
Tunnel magnetoresistance enhancement in ferromagnetic tunnel junctions with ferromagnetic nano-particle layer insertion
Author :
Sukegawa, H. ; Nakamura, S. ; Hirohata, A. ; Tezuka, N. ; Sugimoto, S. ; Inomata, K.
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
2003
Lastpage :
2004
Abstract :
Coulomb blockade dominates the electron transport in an ultra-small double tunnel junction. Here, a helicon sputtering deposition system is used to fabricated Co90Fe10/AlOx/Co90Fe10/AlOx/Co90Fe10 MDTJs. The enhancement of TMR ratio within the Coulomb blockade regime. TMR curves across the MDTJs show a superparamagnetic behavior. It was also observed that the bias voltage dependence of the TMR becomes broader above 50 K, and the enhancement of the TMR around zero bias disappears at room temperature.
Keywords :
Coulomb blockade; aluminium compounds; cobalt alloys; ferromagnetic materials; iron alloys; nanoparticles; sputter deposition; superparamagnetism; tunnelling magnetoresistance; Co90Fe10-AlOx-Co90Fe10-AlOx-Co90Fe10; Coulomb blockade; TMR; bias voltage dependence; electron transport; ferromagnetic nanoparticle layer insertion; ferromagnetic tunnel junctions; helicon sputtering deposition system; superparamagnetic behavior; tunnel magnetoresistance; ultrasmall double tunnel junction; Capacitance; Electrons; Magnetic field measurement; Materials science and technology; Plasma measurements; Plasma temperature; Temperature distribution; Temperature measurement; Tunneling magnetoresistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464440
Filename :
1464440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3540115
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