Title :
Magnetization switching and tunneling magnetoresistance effects with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB
Author :
Hwang, Jae Youn ; Kim, Soon Sub ; Rhee, Jang Rob ; Chun, Byong Sun ; You, Sang, II ; Byung Seok, Oh. ; Kim, Young Keun ; Kim, Taewan ; Park, Wanjun, II
Author_Institution :
Dept. of Phys., Sookmyung Women´´s Univ., Seoul, South Korea
Abstract :
MTJs with the synthetic antiferromagnetic (SAF) free layer consisting of CoFeSiB/Ru/CoFeSiB were prepared because a SAF structure can reduce the magnetostatic coupling. Magnetic switching and tunneling magnetoresistance (TMR) ratio of MTJs were investigated by experiment and by simulation. SAF structures show lower TMR ratio and coercivity (Hc) than single free layer due to low net magnetic moment. The CoFeSiB SAF structure was found to have lower exchange energy.
Keywords :
amorphous magnetic materials; antiferromagnetic materials; boron alloys; cobalt alloys; coercive force; iron alloys; magnetic moments; magnetic switching; ruthenium; silicon alloys; tunnelling magnetoresistance; CoFeSiB-Ru-CoFeSiB; TMR; coercivity; exchange energy; magnetic moment; magnetization switching; magnetostatic coupling; synthetic antiferromagnet free layers; tunneling magnetoresistance; Amorphous magnetic materials; Amorphous materials; Antiferromagnetic materials; Coercive force; Couplings; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Tunneling magnetoresistance;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464449
