DocumentCode
3540207
Title
Surface plasmon resonance analysis of insulating AlOx barrier in magnetic tunnel junctions prepared by natural oxidation method
Author
Do, Young Ho ; Yang, Jung Yup ; Yoon, Kap Soo ; Choi, Won Jun ; Koo, Ja Hyun ; Kim, Cae Ok ; Hong, Jin Pyo
Author_Institution
Dept. of Phys., Hanyang Univ., Seoul, South Korea
fYear
2005
fDate
4-8 April 2005
Firstpage
2027
Lastpage
2028
Abstract
The AlOx insulating barrier in MTJ was fabricated and analyzed by utilizing a natural oxidation and surface plasmon resonance spectroscope (SPRS) technique. The basic structure of MTJ was Ta/CoFe/AlOx:natural oxidation/NiFe/Ta. SPRS was used to investigate optimum thickness and dielectric properties of the AlOx layers. The SPRS results exhibited changes in the oxidation state of the barrier, depending on the oxidation time. Natural oxidation depth and speed were calculated by comparing SPRS simulation results with experimental ones. It was also found that 8 Å of Al layer is the optimum thickness when MTJ was formed using natural oxidation method.
Keywords
aluminium compounds; cobalt alloys; dielectric materials; insulating materials; iron alloys; magnetic tunnelling; nickel alloys; oxidation; surface plasmon resonance; tantalum; 8 angstrom; MTJ; Ta-CoFe-AlOx-NiFe-Ta; dielectric properties; insulating barrier; magnetic tunnel junctions; natural oxidation method; surface plasmon resonance analysis; thickness; Artificial intelligence; Dielectrics and electrical insulation; Gold; Magnetic analysis; Magnetic materials; Magnetic resonance; Magnetic separation; Magnetic tunneling; Oxidation; Plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN
0-7803-9009-1
Type
conf
DOI
10.1109/INTMAG.2005.1464452
Filename
1464452
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