Title :
Angular and NiFe thickness dependence of IrMn/NiFe/IrMn thin films
Author :
Yoo, Yong-Goo ; Min, Seong-Gi ; Baek, Mun-Cheol ; Kang, Kwang-Yong ; Yu, Seong-Cho
Author_Institution :
Inf. Storage Device Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
The variation in exchange bias as a function of FM layer in FM/AFM/FM trilayer structure using IrMn(100 Å)/NiFe(t Å)/IrMn(100 Å) thin films is reported. Unidirectional exchange anisotropy and the uniaxial anisotropy were analysed by ferromagnetic resonance (FMR) measurements. The angular variation in resonance field, as a function of the NiFe layer thickness, manifests a unidirectional behavior for the exchange biased thin film. The variation of the unidirectional anisotropy field (Hex) and uniaxial anisotropy field (Hk) with NiFe thickness was also determined. Results show that Hex and Hk decreases linearly as NiFe thickness increases. When NiFe thickness reaches 800 Å, however, the trend becomes nonlinear which indicates that the uniform magnetization distribution throughout NiFe layers is preserved up to NiFe thickness of 400 Å. The Hex of thicker NiFe layers could be from an inhomogeneous NiFe magnetization reversal due to domain formation in NiFe layer.
Keywords :
antiferromagnetic materials; exchange interactions (electron); ferromagnetic materials; ferromagnetic resonance; iridium alloys; iron alloys; magnetic anisotropy; magnetic domains; magnetic multilayers; magnetic thin films; magnetisation reversal; manganese alloys; nickel alloys; 100 angstrom; 400 angstrom; 800 angstrom; IrMn-NiFe-IrMn; domain formation; exchange biased thin film; ferromagnetic resonance; magnetization reversal; resonance field angular variation; thickness; trilayer structure; uniaxial anisotropy; unidirectional exchange anisotropy; Anisotropic magnetoresistance; Antiferromagnetic materials; Magnetic anisotropy; Magnetic field measurement; Magnetic resonance; Magnetization; Physics; Spin valves; Sputtering; Transistors;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464464