DocumentCode :
3540304
Title :
Angular dependence of exchanes bias field and coecive field in MN-IR/CO-FE epitaxial bilayers
Author :
Kim, D.Y. ; Kim, C.G. ; Kim, C.O. ; Takahashi, M. ; Tsunoda, M. ; Shibata, M.
Author_Institution :
Res. Center for Adv. Magnetic Mater., Chung Nam Nat. Univ., Daejon
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
1027
Lastpage :
1027
Abstract :
The angular dependence of the exchange bias field (Hex) and coercive field (Hc) in the Co-Fe/Mn-Ir epitaxial bilayers is investigated. The Hex and Hc behavior with field angle is analyzed in terms of the main and closure domain structure of crystalline Co-Fe ferromagnetic layer. Hex and H c are observed to decrease slightly as the annealing angle decreases. Hex is found to increase as the magnetic field angle increase till 50deg and shows a peak, and then decrease as the angle increase further. The Hc also decreases up to magnetic field angle 50deg and shows zero values at angle greater than 50deg
Keywords :
annealing; antiferromagnetic materials; cobalt alloys; coercive force; exchange interactions (electron); ferromagnetic materials; interface magnetism; iridium alloys; iron alloys; magnetic domains; magnetic epitaxial layers; manganese alloys; CoFe-MnIr; annealing angle; closure domain structure; coercive field; crystalline ferromagnetic layer; epitaxial bilayers; exchange bias field; magnetic field angle; Anisotropic magnetoresistance; Annealing; Crystallization; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic materials; Magnetization; Perpendicular magnetic anisotropy; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Conference_Location :
Nagoya
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1464465
Filename :
1464465
Link To Document :
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