DocumentCode :
3540854
Title :
An electron mobility independent pulse skipping regulator for a programmable CMOS charge pump
Author :
Saiz-Vela, A. ; Miribel-Catalá, P. ; Puig-Vidal, M. ; Samitier, J.
Author_Institution :
Electron. Dept., Barcelona Univ., Spain
fYear :
2005
fDate :
23-26 May 2005
Firstpage :
117
Abstract :
A charge pump with a soft start-up control system and programmable regulated output is proposed in this paper for battery powered applications. The existing technique of a pulse skipping frequency regulator (PSFR) has been used to obtain a good efficiency over a wide range of loads. However, a new architecture for the PSFR with some improvements like a beta-independent behaviour and a programmable threshold voltage has been designed. The power-up control strategy that has been developed combines a linear and a switched charging sequence in order to avoid great current spikes at the start-up instant. Hence, the battery performance and the transistors of the charge pump are kept without any damage that could be produced by such initial current spikes. The result is a fully CMOS charge pump capable of generating a programmable and regulated output voltage from 3.3V up to 5.5V and deliver a maximum power of 100mW. This circuit has been implemented in 0.7 μ I2T technology from AMI semiconductor.
Keywords :
CMOS integrated circuits; power integrated circuits; power supply circuits; programmable circuits; voltage control; 0.7 micron; 100 mW; 3.3 to 5.5 V; AMI semiconductor; CMOS charge pump; PSFR; battery powered applications; beta-independent behaviour; linear charging sequence; programmable regulated output; programmable threshold voltage; pulse skipping frequency regulator; regulated output voltage; soft start-up control system; switched charging sequence; Batteries; CMOS technology; Charge pumps; Circuits; Control systems; Electron mobility; Frequency; Power generation; Regulators; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
Type :
conf
DOI :
10.1109/ISCAS.2005.1464538
Filename :
1464538
Link To Document :
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