Title :
A monolithic isolation amplifier in silicon-on-insulator CMOS
Author :
Culurciello, Eugenio ; Pouliquen, P. ; Andreou, A.G. ; Strohbehn, K. ; Jaskulek, S.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
We designed and fabricated a 4-channel digital isolation amplifier in a 0.5 μm silicon-on-sapphire (SOS) technology, by taking advantage of the isolation properties of the SOS substrate. The individual isolation channels can operate in the excess of 100Mbps using a differential transmission scheme. The device can tolerate ground bounces of 1V/μs and isolate more than 800V. The device uses an isolated charge pump circuit to power the input circuit from the isolated output side and thus can be used as a sensing device. Applications are in the industrial, medical and military: high reliability systems, harsh industrial environments, transportation, medical and life critical systems.
Keywords :
CMOS integrated circuits; amplifiers; integrated circuit reliability; isolation technology; power supply circuits; sapphire; silicon-on-insulator; 4-channel digital isolation amplifier; SOS technology; differential transmission; ground bounces; high reliability systems; isolated charge pump circuit; life critical systems; monolithic isolation amplifier; silicon-on-insulator CMOS; silicon-on-sapphire technology; transportation; Coupling circuits; Defense industry; Galvanizing; Isolators; Packaging; Physics computing; Silicon on insulator technology; Switches; Transportation; Voltage;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464543
