Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure

Author

Lee, Gil Sung ; Park, Han, II ; Cho, Seongjae ; Yun, Jang Gu ; Lee, Jung Hoon ; Li, Dong Hua ; Kim, Doo Hyun ; Kim, Yoon ; Park, Se Hwan ; Sim, Won Bo ; Lee, Jong Duk ; Park, Byung Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.

Keywords

field effect memory circuits; random-access storage; cone SONOS memory structure; cylinder structure; drain direction; field concentration effect; memory performance; narrow drain; Channel hot electron injection; Computer science; Engine cylinders; Flash memory; Gas insulated transmission lines; Lungs; Nonvolatile memory; SONOS devices; Shape; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418386

Filename

5418386