Title :
Memory characteristics improvement encouraged by the shape of narrow drain in cone SONOS memory structure
Author :
Lee, Gil Sung ; Park, Han, II ; Cho, Seongjae ; Yun, Jang Gu ; Lee, Jung Hoon ; Li, Dong Hua ; Kim, Doo Hyun ; Kim, Yoon ; Park, Se Hwan ; Sim, Won Bo ; Lee, Jong Duk ; Park, Byung Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
We have proposed cone SONOS memory structure previously. The point of the structure is field concentration effect in two directions. Among the two, concentration of source to drain direction is critical in program operation. Simulation result shows the shape of narrow drain leads to great memory performance. Fabricated structure shows the same results. In this report, simplified program simulation result is presented and great injection characteristics is shown by comparison with cylinder structure.
Keywords :
field effect memory circuits; random-access storage; cone SONOS memory structure; cylinder structure; drain direction; field concentration effect; memory performance; narrow drain; Channel hot electron injection; Computer science; Engine cylinders; Flash memory; Gas insulated transmission lines; Lungs; Nonvolatile memory; SONOS devices; Shape; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418386
