Review of advanced and Beyond CMOS FET technologies for radio frequency circuit design

In this paper, the opportunities, limits and challenges for future silicon-based field effect transistors (FETs) tailored for radio frequency (RF) and millimeter (mm)-wave circuit design are discussed. After the review of CMOS FET scaling down to the 10 nm node, advanced CMOS techniques such as silicon on insulator (SOI), strained silicon, high-k, low temperature and multigate transistors are treated. Moreover, emerging Beyond CMOS FET concepts based on silicon nanowires, graphene and carbon nano tubes (CNTs) are discussed as potential replacement or extension to CMOS.