Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention

Author

Maikap, S. ; Banerjee, W. ; Rahaman, S.Z. ; Das, A.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

Enhanced non-volatile memory device characteristics of crystallite Al₂O₃ film (Â¿900Â°C) with a large hysteresis memory window of Â¿V Â¿ 9.8 V under a gate voltage of Â±15 V have been observed due to crystallization of the Al₂O₃ film. The hysteresis memory window of Â¿V Â¿ 3.8 V under a gate voltage of Â±10 V is also observed. Both program and erase speeds of Â¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of Â¿V Â¿ 4.0 V after ~2Ã—l0⁶s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al₂O₃ flash memory devices can be operated at Â¿10V.

Keywords

aluminium compounds; flash memories; random-access storage; Al₂O₂; Fowler-Nordheim injections; atomic layer deposited crystallite films; enhanced nonvolatile memory device characteristics; flash memory device characteristics; large hysteresis memory window; long retention; Annealing; Atomic layer deposition; Capacitance-voltage characteristics; Crystallization; Flash memory; Hysteresis; Nonvolatile memory; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418388

Filename

5418388