Title :
Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention
Author :
Maikap, S. ; Banerjee, W. ; Rahaman, S.Z. ; Das, A.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
Enhanced non-volatile memory device characteristics of crystallite Al2O3 film (¿900°C) with a large hysteresis memory window of ¿V ¿ 9.8 V under a gate voltage of ±15 V have been observed due to crystallization of the Al2O3 film. The hysteresis memory window of ¿V ¿ 3.8 V under a gate voltage of ±10 V is also observed. Both program and erase speeds of ¿V~2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ¿V ¿ 4.0 V after ~2×l06s of retention (~30% charge loss) is obtained. The high-performance ALD crystallite Al2O3 flash memory devices can be operated at ¿10V.
Keywords :
aluminium compounds; flash memories; random-access storage; Al2O2; Fowler-Nordheim injections; atomic layer deposited crystallite films; enhanced nonvolatile memory device characteristics; flash memory device characteristics; large hysteresis memory window; long retention; Annealing; Atomic layer deposition; Capacitance-voltage characteristics; Crystallization; Flash memory; Hysteresis; Nonvolatile memory; Substrates; Temperature; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418388
