Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

Author

Kim, Yoon ; Yun, Jang-Gn ; Park, Han, II ; Cho, Seongjae ; Lee, Jung Hoon ; Park, Se-Hwan ; Lee, Dong Hua ; Kim, Doo-Hyun ; Lee, Gil Sung ; Sim, Won Bo ; Lee, Jong-Duk ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using ATLAS simulation. This device structure is promising for multi-storage and multi-level operation.

Keywords

flash memories; ATLAS simulation; SONOS flash memory; electrical interference; locally-separated vertical channels; multilevel operation; multistorage operation; Computer science; Couplings; Fabrication; Flash memory; Gas insulated transmission lines; Interference; Numerical simulation; Oxidation; SONOS devices; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418389

Filename

5418389