Title :
Novel capacitorless double-gate 1T-DRAM cell having nonvolatile memory function
Author :
Park, Ki-Heung ; Jeong, Min-Kyu ; Kim, Young Min ; Han, Kyoung Rok ; Kwon, Hyuck-In ; Kong, Seong Ho ; Lee, Jong-Ho
Author_Institution :
Sch. of EECS, Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
In this paper, the authors proposed a new double-gate 1-T DRAM cell device which has nonvolatile memory function on one gate. Due to enlarged hole capacity in the floating body by the nonvolatile function, high write1 and low write0 current (high ¿Vth) could be done. By adopting non-overlap structure, device scalability was improved. Proposed device could be a very promising candidate for a future high density and high performance 1T-DRAM cell.
Keywords :
DRAM chips; capacitorless double-gate 1T-DRAM cell; floating body; hole capacity; nonoverlap structure; nonvolatile memory function; Charge carrier processes; Degradation; Doping; Electron traps; Impact ionization; Leg; Nonvolatile memory; Random access memory; Scalability; Silicon;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418391
