Title :
Local accumulated free carriers in charge trapping memory
Author :
Song, Y.C. ; Liu, X.Y. ; Zhao, K. ; Kang, J.F. ; Han, R.Q. ; Xia, Z.L. ; Kim, D. ; Lee, K.-H.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
The effects of local accumulated free carriers on CTM cell´s performance are investigated by numerical simulation. Simulation results indicates that local accumulated free carriers do not affect programming and erasing characteristic, however, they are important to CTM´s retention characteristic, especially in low threshold state. For CTM cell with thick tunneling oxide and shallow trap depth in charge storage layer, absence of accumulated carriers will underestimate retention capability considerably.
Keywords :
numerical analysis; random-access storage; tunnelling; CTM cell performance; charge storage layer; charge trapping memory; local accumulated free carriers; low threshold state; numerical simulation; shallow trap depth; thick tunneling oxide; Charge carrier density; Costs; Electron traps; Flash memory cells; Microelectronics; Nonvolatile memory; Poisson equations; Radiative recombination; Temperature; Tunneling;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418392
