Title :
Vertical channel double split-gate (VCDSG) flash memory
Author :
Yun, Jang-Gn ; Park, Han, II ; Lee, Jung Hoon ; Park, Se-Hwan ; Kim, Yoon ; Lee, Dong Hua ; Cho, Seongjae ; Kim, Doo-Hyun ; Lee, Gil Sung ; Sim, Won Bo ; Lee, Jong-Duk ; Park, Byung-Gook
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
Abstract :
A novel vertical channel double split-gate (VCDSG) flash memory is investigated. As well as the single-level operation, this device is especially useful for the multi-level cell (MLC) to operate as a 4-bit/cell. Operation and fabrication issues related with the 3-dimensional cell structure are addressed. For high density integration, simple contact array scheme is proposed.
Keywords :
flash memories; 3D cell structure; contact array scheme; high density integration; multi-level cell operation; vertical channel double split-gate flash memory; Character generation; Computer science; Dielectrics; Fabrication; Flash memory; Gas insulated transmission lines; Interference; Nonvolatile memory; SONOS devices; Split gate flash memory cells;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418393
