Atomistic modeling on carbon co-implant with silicon pre-amorphization implant technique

Author

Park, Soon-Yeol ; Cho, Bum-Goo ; Won, Taeyoung

Author_Institution

Dept. of Electr. Eng., Inha Univ., Incheon, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

In this paper, boron transient enhanced diffusion in silicon pre-amorphization implant (PAI) and carbon co-implant PAI is investigated via kinetic Monte Carlo approach. The damages induced by Si-PAI and carbon co-implant are calculated. Boron implantation and subsequent annealing are thereafter performed. The simulation implies that carbon co-implant PAI reduces the amount of interstitial near the surface when compared with Si-PAI and that carbon co-implant with silicon PAI reduced TED effectively.

Keywords

Monte Carlo methods; annealing; boron; carbon; diffusion; elemental semiconductors; interstitials; ion implantation; silicon; Si:B,C; annealing; atomistic modeling; boron implantation; boron transient enhanced diffusion; carbon co-implant; interstitial; kinetic Monte Carlo approach; silicon preamorphization implant technique; Boron; FETs; Implants; Information technology; Ion implantation; Kinetic theory; MOSFET circuits; Mass spectroscopy; Rapid thermal annealing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418405

Filename

5418405