A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body

A compact model of fully-depleted surrounding-gate (SG) MOSFETs with a doped body is presented. Both the numerical and the analytical models are derived from approximations by a superposition principle of the depletion region and the strong inversion region for the efficiency of the calculation. From those assumptions, the numerical and the analytical center potentials are obtained, and the surface potential, the inversion charge, and the drain-source current are also obtained. The results simulated from the analytical center and surface potential models as well as those simulated from the numerical models reproduce those simulated from the 3D device simulator within 1% errors. The inversion charges and drain currents simulated from the analytical model reproduce those simulated from the numerical model within 1% errors.