• DocumentCode
    3541147
  • Title

    Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

  • Author

    Kim, DukSoo ; Jung, YoungChai ; Park, MiYoung ; Kim, ByungSung ; Hong, SuHeon ; Choi, Minsu ; Kang, MyungGil ; Yu, YunSeop ; Whang, Dongmok ; Sungwoo Hwang

  • Author_Institution
    Res. Center for Time-domain Nano-functional Devices, Korea Univ., Seoul, South Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.
  • Keywords
    field effect transistors; nanotechnology; nanowires; back-gated bottom-up silicon nanowire field effect transistor; electrical characteristics; standard vapor-liquid-solid process; transconductance data; Doping; Electric variables; FETs; Gold; Intrusion detection; Nanoscale devices; Silicon; Time domain analysis; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418412
  • Filename
    5418412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541147