DocumentCode
3541179
Title
Multiple data storage of URAM (Unified-RAM) with multi dual cell (MDC) method
Author
Bae, Dong-Il ; Gu, Bonsang ; Ryu, Seong-Wan ; Cho, Yang-Kyu
Author_Institution
Div. of EE, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear
2008
fDate
15-16 June 2008
Firstpage
1
Lastpage
2
Abstract
A multi-functional URAM (Unified-RAM) showing both 1T DRAM and flash memory characteristics at one cell is demonstrated. For flash memory characteristics, we fabricated a conventional floating body SOI NMOSFET with O/N/O stacks as a front gate. By combining two different operation modes of URAM, multiple data storage is demonstrated with a multi-dual cell (MDC).
Keywords
DRAM chips; MOSFET; flash memories; silicon-on-insulator; 1T DRAM; O/N/O stacks; URAM; flash memory characteristics; floating body SOI NMOSFET; multidual cell method; multiple data storage; unified-RAM; Capacitance; Costs; Fabrication; Flash memory; Lithography; MOSFET circuits; Mechanical factors; Nonvolatile memory; Random access memory; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-2071-1
Type
conf
DOI
10.1109/SNW.2008.5418416
Filename
5418416
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