Title :
A resistive switch device based on SbTeN chalcogenide film
Author :
Park, Young Sam ; Lee, Seung-Yun ; Yoon, Sung-Min ; Jung, Soon Won ; Yu, Byoung Gon
Author_Institution :
Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
Abstract :
To meet the needs of the next-generation programmable switch circuit, we propose a SbTeN-based resistive switch device, which unifies the functions of the pass transistor and the SRAM-cell, has non-volatility, and passes endurance specification. By adding an optimum nitrogen-content in a SbTe film, the on-resistance reduction is successfully demonstrated, which is considered to be the first solution to meet the needs for low-power consumption.
Keywords :
antimony compounds; chalcogenide glasses; field programmable gate arrays; low-power electronics; nitrogen compounds; random-access storage; semiconductor switches; semiconductor thin films; tellurium compounds; SbTeN; chaicogenide glass; chalcogenide film; device endurance specification; low-power consumption; next-generation programmable switch circuit; nonvolatility; on-resistance reduction; pass transistor-SRAM cell function; resistive switch device; Electrical resistance measurement; Fabrication; Field programmable gate arrays; Glass; Nonvolatile memory; Pulse measurements; Sputtering; Switches; Switching circuits; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418418
