A resistive switch device based on SbTeN chalcogenide film

Author

Park, Young Sam ; Lee, Seung-Yun ; Yoon, Sung-Min ; Jung, Soon Won ; Yu, Byoung Gon

Author_Institution

Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

To meet the needs of the next-generation programmable switch circuit, we propose a SbTeN-based resistive switch device, which unifies the functions of the pass transistor and the SRAM-cell, has non-volatility, and passes endurance specification. By adding an optimum nitrogen-content in a SbTe film, the on-resistance reduction is successfully demonstrated, which is considered to be the first solution to meet the needs for low-power consumption.

Keywords

antimony compounds; chalcogenide glasses; field programmable gate arrays; low-power electronics; nitrogen compounds; random-access storage; semiconductor switches; semiconductor thin films; tellurium compounds; SbTeN; chaicogenide glass; chalcogenide film; device endurance specification; low-power consumption; next-generation programmable switch circuit; nonvolatility; on-resistance reduction; pass transistor-SRAM cell function; resistive switch device; Electrical resistance measurement; Fabrication; Field programmable gate arrays; Glass; Nonvolatile memory; Pulse measurements; Sputtering; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418418

Filename

5418418