Title :
A novel low-power input-independent MOS AC/DC charge pump
Author :
Yao, Yuan ; Shi, Yin ; Dai, Foster F.
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Abstract :
The paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced the Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which have fewer process defects and are thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35 μm CMOS technology with 0.24 mm2 size. The analytical model of the charge pump and the simulation results are presented.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit modelling; low-power electronics; power consumption; radiofrequency identification; semiconductor device models; semiconductor diodes; sensitivity; voltage multipliers; 0.35 micron; CMOS technology; MOS diodes; RFID transponder; Schottky-diodes; analytical model; fully integrated MOS AC-DC charge pump; input sensitivity; power dissipation; voltage multipliers; Analytical models; CMOS technology; Charge pumps; Circuits; FETs; Power dissipation; Radio frequency; Radiofrequency identification; Schottky diodes; Voltage; AC/DC; charge pump; low-power CMOS; radio-frequency identification (RFID);
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464604
