Title :
SiGe MMIC´s beyond 20 GHz on a commercial technology
Author :
Rheinfelder, C.N. ; Kuhnert, H. ; Luy, J.-F. ; Heinrich, W. ; Schuppen, A.
Author_Institution :
DaimlerChrysler Res. Center Ulm, Germany
Abstract :
A comparison of 22 and 25 GHz MMIC SiGe-HBT oscillators on high- and low-resistivity silicon employing the commercial TEMIC process is presented. An output power of 11 dBm at 22 GHz, an efficiency of 24%, and, at 25 GHz, a phase-noise of -93 dBc/Hz at 100 kHz off-carrier is measured.
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit technology; semiconductor materials; 22 GHz; 24 percent; 25 GHz; HBT oscillator; SiGe; SiGe MMIC technology; TEMIC process; Costs; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; MMICs; Phase noise; Resistors; Silicon germanium; Space technology; Substrates;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863285
