• DocumentCode
    3541370
  • Title

    Characteristic modulation of silicon MOSFETs and single electron transistors with a movable gate electrode

  • Author

    Park, J.S. ; Saraya, T. ; Miyaji, K. ; Shimizu, K. ; Higo, A. ; Takahashi, K. ; Yi, Y.H. ; Toshiyoshi, H. ; Hiramoto, Toshiro

  • Author_Institution
    Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The silicon MOSFET and single-electron-transistor (SET) with a movable gate electrode (MGE) are reported. For the first time, the modulation of the pull-in voltage, where subthreshold swing (SS) is much steeper. than 60mV/dec, is experimentally demonstrated in MGE MOSFET using an additional electrode. The modulation of FWHM and peak position of Coulomb blockade oscillation (CBO) by tuning capacitance of SET is also experimentally demonstrated for the first time.
  • Keywords
    Coulomb blockade; MOSFET; silicon; single electron transistors; Coulomb blockade oscillation; movable gate electrode; silicon MOSFET; single electron transistors; subthreshold swing; tuning capacitance; Capacitance; Circuit optimization; Electrodes; Equivalent circuits; Fabrication; MOSFETs; Silicon; Single electron transistors; Tuning; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418442
  • Filename
    5418442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541370