DocumentCode
354140
Title
Scalable GaInP/GaAs HBT large-signal model
Author
Rudolph, M. ; Doerner, R. ; Beilenhoff, K. ; Heymann, P.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
753
Abstract
A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented. It allows exact modeling of all transistor parameters from single finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model is verified by comparison with measurements of GaInP/GaAs-HBTs.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device models; GaInP-GaAs; GaInP/GaAs HBT; device scaling; heterojunction bipolar transistor; large-signal model; multifinger power device; Bipolar transistors; Diodes; Electrical resistance measurement; Equivalent circuits; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Power measurement; Power system modeling; Power transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863291
Filename
863291
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