Title :
Scalable GaInP/GaAs HBT large-signal model
Author :
Rudolph, M. ; Doerner, R. ; Beilenhoff, K. ; Heymann, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
A scalable large-signal model for heterojunction bipolar transistors (HBTs) is presented. It allows exact modeling of all transistor parameters from single finger elementary cells to multifinger power devices. The scaling rules are given in detail. The model is verified by comparison with measurements of GaInP/GaAs-HBTs.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; semiconductor device models; GaInP-GaAs; GaInP/GaAs HBT; device scaling; heterojunction bipolar transistor; large-signal model; multifinger power device; Bipolar transistors; Diodes; Electrical resistance measurement; Equivalent circuits; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Power measurement; Power system modeling; Power transistors;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863291
