Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics

Author

Hill, R.J.W. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D.S. ; Thoms, S. ; Asenov, A. ; Thayne, I.G. ; Droopad, R. ; Rajagopalan, K. ; Fejes, P. ; Passlack, M.

Author_Institution

Nanoelectron. Res. Centre, Univ. of Glasgow, Glasgow, UK

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

There is a growing belief that strained silicon alone may not be able to deliver sufficient performance beyond the 22nm technology generation of the International Technology Roadmap for Semiconductors (ITRS), and that high mobility channel materials may be required. This view has led to the establishment of various collaborations to explore the potential of high mobility III-V semiconductors, particularly for n-MOSFET realisation, such as the SRC Non Classical CMOS Research Center in the US and the DualLogic project in Europe. This paper describes the first results from flatband-mode (FB) In_0.75Ga_0.25As channel nMOSFETs which have highly encouraging performance metrics.

Keywords

III-V semiconductors; MOSFET; III-V semiconductors; channel nMOSFET; flatband-mode; high mobility channel materials; metal-oxide-semiconductor field effect transistors; performance metrics; strained silicon; CMOS technology; Contact resistance; Dielectric materials; Dielectric substrates; Electrons; III-V semiconductor materials; MOSFET circuits; Measurement; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418447

Filename

5418447