Title :
A comprehensive study of single-electron effects in multiple-gate MOSFETs
Author :
Lee, Wei ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, an in-depth study of single-electron effects in multiple-gate SOI MOSFETs had been conducted. The impact of quantum mechanical effects on Coulomb blockade oscillations has been investigated. The study indicated that, to enable room-temperature SET applications, raising the gate-dot coupling strength and the access resistance were crucial. The multiple-gate SOI MOSFET with the non-overlapped architecture was an attractive approach for future SETs.
Keywords :
Coulomb blockade; MOSFET; quantum theory; silicon-on-insulator; single electron transistors; Coulomb blockade oscillations; SET applications; Si; access resistance; gate-dot coupling strength; multiple-gate SOI MOSFET; nonoverlapped architecture; quantum mechanical effects; single-electron effects; temperature 293 K to 298 K; CMOS process; Circuits; Electrostatics; FinFETs; MOSFETs; Nanoelectronics; Quantum mechanics; Silicon; Single electron transistors; Temperature control;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418450
