Effects of growth temperature on crystal structure, electrical, and photoluminescence of ZnO thin films

Author

Sugihartono, Iwan ; Bambang, S. ; Hikam, M. ; Handoko, E. ; Fan, H.M. ; Tan, Siang Tong ; Sun, X.W.

Author_Institution

FMIPA, Jurusan Fis., Univ. Negeri Jakarta, Jakarta, Indonesia

fYear

2013

fDate

25-28 June 2013

Firstpage

232

Lastpage

234

Abstract

ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolysis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase monotonically with increasing temperature. We believed that the ZnO thin films quality improved by increasing growth temperature.

Keywords

Hall effect; II-VI semiconductors; liquid phase deposition; photoluminescence; pyrolysis; semiconductor growth; semiconductor thin films; ultrasonic applications; wide band gap semiconductors; zinc compounds; Si (111) substrate; UV emission; ZnO; crystal structure; donor concentrations; electrical properties; green emission; photoluminescence; thin films; ultrasonic spray pyrolisis; Films; Grain size; Silicon; Substrates; Temperature; Temperature measurement; Zinc oxide; Growth temperature; Hall measurement; PL; XRD; ZnO thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

QiR (Quality in Research), 2013 International Conference on

Conference_Location

Yogyakarta

Print_ISBN

978-1-4673-5784-5

Type

conf

DOI

10.1109/QiR.2013.6632570

Filename

6632570